Method for making a perovskite quantum dot material

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United States of America Patent

PATENT NO 10633584
APP PUB NO 20170233645A1
SERIAL NO

15584042

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Abstract

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Provided is a hybridized perovskite quantum dot material. The quantum dot material comprises a kernel and surface ligands. The kernel is formed by R1NH3AB3 or (R2NH3)2AB4, where R1 is methyl group, R2 is an organic molecular group, A is at least one selected from Ge, Sn, Pb, Sb, Bi, Cu and Mn, B is at least one selected from Cl, Br and I, A and B form a coordination octahedral structure, and R1NH3 or R2NH3 is filled in gaps of the coordination octahedral structure. The surface ligand is an organic acid or organic amine. The quantum dot material has a high fluorescence quantum yield.

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Patent Owner(s)

  • SHENZHEN TCL NEW TECHNOLOGY CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Hailong Guangdong, CN 9 76
Niu, Yuwei Guangdong, CN 2 23
Wu, Xiangang Guangdong, CN 2 23
Zhang, Feng Guangdong, CN 1002 28040
Zhong, Haizheng Guangdong, CN 15 54

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