C-PLANE SAPPHIRE METHOD AND APPARATUS

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United States of America Patent

SERIAL NO

15466466

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Abstract

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A method and apparatus for the production of C-plane single crystal sapphire is disclosed. The method and apparatus may use edge defined film-fed growth techniques for the production of single crystal material exhibiting low polycrystallinity and/or low dislocation density.

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Patent Owner(s)

Patent OwnerAddress
LUXIUM SOLUTIONS LLC17900 GREAT LAKES PARKWAY HIRAM OH 44234

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JONES, Christopher D Los Altos, US 130 1599
LOCHER, JOHN W Amherst, US 13 344
PRANADI, Fery Nashua, US 14 228
TATARTCHENKO, VITALI Puteaux, FR 5 49
ZANELLA, Steven A Dublin, US 7 32

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