Resistive Random Access Memory
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United States of America Patent
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Issued Date -
Aug 3, 2017
app pub date -
May 17, 2016
filing date -
Feb 1, 2016
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A resistive random access memory is provided to solve the problem of low switching speed of the conventional resistive random access memory. The resistive random access memory may include a thermally conductive layer, a first electrode layer, a heat preserving element, a resistance changing layer and a second electrode layer. The first electrode layer is arranged on the thermally conductive layer. The heat preserving element is arranged on the first electrode layer and forms a through-hole. A part of a surface of the first electrode layer is exposed to the through-hole. The resistance changing layer extends from the part of the surface of the first electrode layer to a surface of the heat preserving element that is located outside the through-hole. The second electrode layer is arranged on the resistance changing layer.
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