NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

SERIAL NO

15501227

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Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The n-type nitride semiconductor layer contains AlX1InX2GaX3N (wherein 017/cm3.

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USHIO DENKI KABUSHIKI KAISHA1-6-5 MARUNOUCHI CHIYODA-KU TOKYO 1008150 ?1008150

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
MIYOSHI, Kohei Himeji-shi, Hyogo, JP 41 394
SUGIYAMA, Toru Himeji-shi, Hyogo, JP 138 1630
TSUKIHARA, Masashi Himeji-shi, Hyogo, JP 15 67

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