Manufacture method of TFT substrate structure and TFT substrate structure
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United States of America Patent
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Jan 2, 2018
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app pub date -
Jun 24, 2015
filing date -
Jun 9, 2015
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Abstract
The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure, as manufacturing the gate, a plurality of metal sections distributed in spaces are formed at two sides of the gate, and the gate and the plurality of metal sections are employed to be a mask to implement ion implantation to the polysilicon layer. In the TFT substrate structure according to the present invention, the undoped areas are formed among the n-type heavy doping areas while forming the n-type heavy doping areas at the polysilicon layer.
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