METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR
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United States of America Patent
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Feb 3, 2016
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Feb 3, 2016
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Abstract
The present invention provides a method of fabricating a fin field effect transistor (finFET), comprising: firstly, an interfacial layer is formed on a fin structure, next, a high-k dielectric layer is formed on the interfacial layer; afterwards, a stress film is formed on the high-k dielectric layer, an annealing process is then performed to the stress film, and an etching process is performed to remove the stress film.
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