SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
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United States of America Patent
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app pub date -
Sep 2, 2015
filing date -
Sep 2, 2014
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Abstract
A manufacturing method for a semiconductor device is provided. The method comprises: providing a semiconductor substrate (200); sequentially forming an oxide layer (201) and a silicon nitride layer (202) on the semiconductor substrate (200); annealing the silicon nitride layer (202), and then etching an active region (401) by using the silicon nitride layer (202) as a mask, so as to form in the semiconductor substrate (200) a trench (203) for filling an isolation material, wherein the active region (401) comprises a gate region (403) and a source region (404) and a drain region (405) that are respectively located on two sides of the gate region (403), and the gate region (403) comprises a body part connected to the source region (404) and the drain region (405) and a protruding part (406) that protrudes and extends from the body part to the trench; etching-back the silicon nitride layer (202) and forming a lining oxide layer (201) on the sidewall and the bottom of the trench; depositing an isolation material layer (205) to fill the trench; grinding the isolation material layer (205) until the top of the silicon nitride layer (202) is exposed; and etching to remove the silicon nitride layer (202).
First Claim
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Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
CN | A | CN105448734 | Sep 02, 2014 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
UNEXAMINED APPLICATION FOR A PATENT FOR INV. | Method for improving double-hump effect of device, and semiconductor device | Mar 30, 2016 | |||
WO | A1 | WO2016034123 | Sep 02, 2015 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
INTERNATIONAL APPLICATION PUBLISHED WITH INTERNATIONAL SEARCH REPORT | 半导体器件及其制造方法 | Mar 10, 2016 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
CSMC TECHNOLOGIES FAB1 CO LTD | JIANGSU 214028 |
International Classification(s)

- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
HAO, Long | Wuxi New District, Jiangsu, CN | 4 | 3 |
# of filed Patents : 4 Total Citations : 3 | |||
JIN, Yan | Wuxi New District, Jiangsu, CN | 63 | 269 |
# of filed Patents : 63 Total Citations : 269 | |||
LI, Wei | Wuxi New District, Jiangsu, CN | 2284 | 14552 |
# of filed Patents : 2284 Total Citations : 14552 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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