METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF FORMING MASK
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United States of America Patent
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Issued Date -
Aug 3, 2017
app pub date -
Dec 21, 2016
filing date -
Jan 28, 2016
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Abstract
A first mask with a first pattern is formed above a substrate, a first portion is formed in or above the substrate using the first mask, a second mask with a second pattern is formed above the substrate, a first positional deviation between the first portion and the second pattern is measured, a second portion is formed in or above the substrate using the second mask, a third mask with a third pattern is formed above the substrate, and a third portion is formed in or above the substrate using the third mask. In the forming the third mask, the third pattern is formed in a material film for the third mask with alignment in consideration of the first positional deviation.
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