PEDESTAL CONSTRUCTION WITH LOW COEFFICIENT OF THERMAL EXPANSIION TOP
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United States of America Patent
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Apr 11, 2017
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Jul 3, 2012
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Abstract
A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly on the application substrate, an insulation layer disposed on the heater layer, and a second substrate disposed on the insulation layer. The heater layer is directly disposed on the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer. A periphery of the second substrate extends beyond a periphery of the application substrate.
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