Radiation tolerant microstructured three dimensional semiconductor structure
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United States of America Patent
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Jun 16, 2020
Grant Date -
Aug 3, 2017
app pub date -
Apr 21, 2017
filing date -
Mar 15, 2013
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Abstract
According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.
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