METHOD FOR POLISHING GERMANIUM WAFER
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United States of America Patent
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Jun 18, 2015
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Jul 28, 2014
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Abstract
A method for polishing a germanium wafer having a surface composed of germanium, including: adding aqueous hydrogen peroxide to a first polishing slurry of an aqueous alkaline solution containing colloidal silica to make a second polishing slurry, and polishing the surface of the germanium wafer by using the second polishing slurry; wherein the aqueous hydrogen peroxide is added to the first polishing slurry in a concentration such that 30 wt % aqueous hydrogen peroxide is added in a volume of more than 0 vol % and 0.1 vol % or less based on the volume of the first polishing slurry, and the polishing is performed by using the second polishing slurry. A method for polishing a germanium wafer that can make the surface roughness of a polished Ge surface be sufficiently small, and can sufficiently suppress generation of interface defects such as voids and blisters when used for a wafer to be bonded.
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