HYBRID SEMICONDUCTOR LASER ABSENT A TOP SEMICONDUCTOR CLADDING LAYER
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United States of America Patent
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Jul 27, 2017
app pub date -
Apr 25, 2014
filing date -
Apr 25, 2013
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Abstract
In at least one embodiment, a semiconductor laser is constructed to have a waveguide core including an active region, a top cladding, and a bottom cladding. The top cladding is positioned above the waveguide core and comprises a dielectric layer and a metal layer and optionally a thin semiconductor contact layer. In at least one embodiment of the semiconductor laser, the top cladding is absent a semiconductor material which is able to contain at least 1% of an optical wave that is generated within the waveguide core.
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