SELF-ALIGNED SHIELDED-GATE TRENCH MOS-CONTROLLED SILICON CARBIDE SWITCH WITH REDUCED MILLER CAPACITANCE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Jul 1, 2015
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Jul 25, 2014
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Abstract
Disclosed herein is a shielded-gate silicon carbide trench MOS-controlled switch, such as a MOSFET or IGBT, with a reduced Miller capacitance. The switch disclosed herein can be used in a variety of applications, including high temperature and/or high voltage power conversion.
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