Method and System for Forming Patterns Using Charged Particle Beam Lithography with Variable Pattern Dosage
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United States of America Patent
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Jul 27, 2017
app pub date -
Apr 7, 2017
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Sep 1, 2008
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Abstract
A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
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