Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
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United States of America Patent
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Jul 7, 2020
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Jul 27, 2017
app pub date -
Jun 11, 2014
filing date -
Jun 27, 2013
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Abstract
Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.
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