IMAGE SENSOR CONTACT ENHANCEMENT
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United States of America Patent
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Issued Date -
Jul 20, 2017
app pub date -
Jan 14, 2016
filing date -
Jan 14, 2016
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Abstract
An image sensor includes a photodiode disposed in semiconductor material. The photodiode is one of a plurality of photodiodes formed in an array. The image sensor also includes a floating diffusion disposed in the semiconductor material, and the floating diffusion is disposed adjacent to the photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the individual photodiode into the floating diffusion. Peripheral circuitry is disposed in the semiconductor material and includes a first electrical contact to the semiconductor material. A first silicide layer is disposed on the floating diffusion, a second silicide layer is disposed on the transfer gate, and a third silicide layer is disposed on the first electrical contact to the semiconductor material.
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