SELF-ALIGNED SOURCE/DRAIN CONTACT IN REPLACEMENT METAL GATE PROCESS
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United States of America Patent
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Jan 14, 2016
filing date -
Jan 14, 2016
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Abstract
A starting semiconductor structure for a RMG process includes a semiconductor substrate, transistors in process having dummy gates and electrically isolated by isolation regions. The dummy gates are replaced with metal gates and gate caps, the structure being planarized after replacing the gate. A cap layer is formed over the planarized structure, and trenches are formed through the cap to expose source and drain regions of the transistors, which allows for self-aligned source and drain contacts. Semiconductor structures including the source and drain trenches for self-aligned source/drain contacts are also presented.
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