MEMS PRESSURE SENSOR WITH MODIFIED CAVITY TO IMPROVE BURST PRESSURE
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United States of America Patent
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Issued Date -
Jul 20, 2017
app pub date -
Jan 19, 2016
filing date -
Jan 19, 2016
priority date (Note) -
Published
status (Latency Note)
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Abstract
A method for producing a silicon based MEMS pressure sensor includes forming a cavity in a first (100) surface of a silicon wafer with first and second parallel (100) surfaces wherein the angle between the walls of the first cavity and the first (100) surface where they intersect the first (100) surface are greater than 90 degrees and the remaining material between the bottom of the cavity and the second parallel (100) surface comprises a flexible diaphragm. The method also includes forming a backing wafer, having a through hole, and bonding the silicon wafer to the backing wafer such that the hole in the backing wafer matches up with the cavity in the second side of the (100) silicon wafer. A dielectric layer is formed on the second side of the (100) silicon wafer and a sensing element is formed on the dielectric layer to detect pressure induced deflection of the silicon diaphragm.
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