MANUFACTURING METHOD OF METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR
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United States of America Patent
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Issued Date -
Jul 13, 2017
app pub date -
May 19, 2016
filing date -
Jan 7, 2016
priority date (Note) -
Abandoned
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Abstract
A manufacturing method of a metal oxide semiconductor thin film transistor is provided. The manufacturing method includes following steps. A gate, a gate insulating layer, a patterned metal oxide semiconductor layer and a conductive layer are formed on a substrate first. Next, a first patterned photoresist layer and two second patterned photoresist layers are formed on the conductive layer. Next, a first etching process is performed and the first patterned photoresist layer is then removed. Next, a second etching process is performed to form a source and a drain, and the second patterned photoresist layers are then removed. The source and the drain of the present invention are formed by performing two etching processes to different portions of the conductive layer respectively. Thus, the metal oxide semiconductor layer is prevented from being influenced by the processes of forming the source and the drain, and the process stability is maintained.
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