FIELD RELAXATION THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS INCLUDING THE TRANSISTOR
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United States of America Patent
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app pub date -
Mar 15, 2017
filing date -
Oct 16, 2013
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Abandoned
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Abstract
A thin film transistor includes a semiconductor pattern formed on a substrate, the semiconductor pattern being formed of an oxide semiconductor and including a source area, a drain area, and an intermediate area that is formed between the source area and the drain area and includes a plurality of first areas and a second area having higher conductivity than the first areas; a first insulating pattern formed to cover at least the first areas; a second insulating film formed to face the second area, the source area and the drain area; a gate electrode formed on the semiconductor pattern and insulated from the semiconductor pattern by the first insulating pattern and the second insulating film; and source and drain electrodes insulated from the gate electrode and being in contact with the source area and the drain area.
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