NITRIDE BASED LIGHT EMITTING SEMICONDUCTOR DEVICE WITH DESIRABLE CARBON TO ALUMINUM CONCENTRATION RATIO
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United States of America Patent
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Jul 6, 2017
app pub date -
Jun 6, 2016
filing date -
Jan 4, 2016
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A semiconductor light-emitting device including at least one n-type semiconductor layer, at least one p-type semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is disposed between the at least one p-type semiconductor layer and the at least one n-type semiconductor layer. A ratio of carbon concentration to aluminum concentration in any one semiconductor layer containing aluminum in the semiconductor light-emitting device ranges from 10−4 to 10−2.
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