Importance

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Abstract

The invention provides an active device and a manufacturing method thereof, the active device disposed on a substrate includes a gate, a gate insulating layer, a metal oxide semiconductor layer, an etch stop layer, a source, and a drain. The gate insulating layer is disposed on the substrate and covers the gate. The metal oxide semiconductor layer is disposed on the gate insulating layer. The etch stop layer is disposed on the metal oxide semiconductor layer. The edges of the metal oxide semiconductor layer are retracted a distance compared to the edges of the etch stop layer. The source and the drain are disposed on the etch stop layer, disposed along the edges of the etch stop layer and the edges of the metal oxide semiconductor layer, and extendedly disposed on the gate insulating layer. A part of the etch stop layer is exposed between the source and the drain.

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First Claim