Schottky Barrier Semiconductor Device Having a Nanoscale Film Interface
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Apr 26, 2016
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Jan 6, 2016
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A Schottky barrier semiconductor device having a nanoscale film interface comprises a Schottky barrier layer and a metal electrode; wherein a nanoscale film interface layer is formed on a top surface of the Schottky barrier layer, a thickness of the nanoscale film interface layer is greater than 3 Å and smaller than 20 Å, the nanoscale film interface layer is made of at least one oxide; the metal electrode is formed on the nanoscale film interface layer and contacted with the nanoscale film interface layer.
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