METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
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United States of America Patent
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Issued Date -
Jul 6, 2017
app pub date -
Jan 4, 2016
filing date -
Jan 4, 2016
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Abstract
A method for manufacturing a thin-film transistor is provided, including the following steps. A gate electrode is formed on a substrate. An insulating layer is formed on the gate electrode. A patterned active layer is formed on the insulating layer. A conductive layer having a thickness is formed on the patterned active layer and the insulating layer. The thickness of a first portion of the conductive layer that overlies the patterned active layer is reduced to leave the first portion of the conductive layer over the pattern active layer. The conductive layer is etched to expose the patterned active layer under the first portion of the conductive layer.
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