Low voltage trench metal oxide semiconductor field effect transistor

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United States of America Patent

PATENT NO 10784253
APP PUB NO 20170194316A1
SERIAL NO

15373906

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Abstract

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A semiconductor device includes a substrate and a source metal formed on the substrate. A gate pad is formed on the substrate adjacent to the source metal. A gate metal is formed on the substrate and surrounds the gate pad and the source metal. A first diode is formed between the gate metal and the source metal.

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Patent Owner(s)

Patent OwnerAddress
MAGNACHIP SEMICONDUCTOR LTDNORTH CHUNGCHEONG PROVINCE JEOLLABUK-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Soo Chang Seoul, KR 14 5
Kim, Seung Hyun Seoul, KR 142 402
Lee, Yong Won Bucheon-si, KR 31 53

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