Sputtering target and process for production thereof

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United States of America Patent

PATENT NO 10636633
APP PUB NO 20170194131A1
SERIAL NO

15304938

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Abstract

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Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc and a process for production thereof. The sputtering target is a sputtering target comprising metallic Co, metallic Pt, and an oxide, wherein the sputtering target does not contain metallic Cr, and the oxide is WO3 and wherein the sputtering target comprises 25 to 50 at % of metallic Co relative to a total of metallic Co and metallic Pt.

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Patent Owner(s)

Patent OwnerAddress
TANAKA KIKINZOKU KOGYO K K7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 100-6422

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hinata, Shintaro Sendai, JP 5 8
Saito, Shin Sendai, JP 124 1704
Takahashi, Migaku Sendai, JP 58 511
Tham, Kim Kong Tsukuba, JP 11 7
Yamamoto, Toshiya Tsukuba, JP 27 98

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