CRUCIBLE FOR GROWING CRYSTALS

Number of patents in Portfolio can not be more than 2000

United States of America Patent

SERIAL NO

15323246

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Abstract

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Crucible for growing single crystals, formed from W, Mo, Re, an alloy or a base alloy of these metals, and a process for producing a crucible (2), wherein at least part of an outwardly facing outer face (4) of the crucible (2) has, at least in certain regions, a profile with a mean profile depth (a) of between 5 and 500 μm.

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Patent Owner(s)

Patent OwnerAddress
PLANSEE SE6600 REUTTE
PLANSEE (SHANGHAI) HIGH PERFORMANCE MATERIAL LTD555 YITIAN ROAD PUDONG LINGANG HEAVY EQUIPMENT INDUSTRIAL ZONE PUDONG NEW AREA SHANGHAI 201306 MUNICIPAL DISTRICT SHANGHAI CITY 201306

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHENG, David Shanghai, CN 71 5423
EBERLE, Wolfgang Heiterwang, AT 24 204
HAMMERLE, Walter Reutte, AT 2 1
HOCHSTRASSER, Mathias Shanghai, CN 1 1
KLEINPASS, Bernd Pfronten, DE 6 3
LARCHER, Heike Bach, DE 2 2
WEBHOFER, Martin Pflach, AT 1 1

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