Avalanche photodiode using silicon nanowire and silicon nanowire photomultiplier using the same
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United States of America Patent
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May 1, 2018
Issued Date -
Jun 29, 2017
app pub date -
Jul 15, 2016
filing date -
Dec 29, 2015
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Abstract
Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.
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