ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS

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United States of America Patent

SERIAL NO

15314789

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Abstract

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An AlN crystal preparation method includes using at least one element excluding Si that fulfills the condition that a compound is not formed with either Al or N or the condition that a compound is formed with either Al or N but the standard free energy of formation of said compound is greater than the standard free energy of formation of AlN. In the preparation method, a composition including at least Al and the element is melted. Al vapor and nitrogen gas are reacted at a prescribed reaction temperature. AlN crystals are formed.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL UNIVERSITY CORP NAGOYA UNIVERSITY1 FURO-CHO CHIKUSA-KU NAGOYA-SHI AICHI 4648601

International Classification(s)

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  • 2015 Application Filing Year
  • C09K Class
  • 2848 Applications Filed
  • 2073 Patents Issued To-Date
  • 72.79 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Mingyu Nagoya-shi, JP 62 301
NAGAYA, Masashi Nagoya-shi, JP 9 11
TAKEUCHI, Yukihisa Nagoya-shi, JP 404 6112
UJIHARA, Toru Nagoya-shi, JP 17 37

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  • 2 Citation Count
  • C09K Class
  • 24.18 % this patent is cited more than
  • 8 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges228601831483221101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7091 - 100100 +050100150200250300350400450500550600650

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