Method of Fabricating an Enhancement Mode Group III-Nitride HEMT Device and a Group III-Nitride Structure Fabricated Therefrom
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Nov 17, 2016
filing date -
Dec 18, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The disclosure relates to a method of fabricating an enhancement mode Group III-nitride HEMT device and a Group III-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode Group III-nitride HEMT device. The method includes providing a structure. The structure includes a substrate having a main surface. The structure also includes a layer stack overlying the main surface. Each layer of the layer stack includes a Group III-nitride material. The structure further includes a capping layer on the layer stack. The method also includes forming a recessed gate region by removing, in a gate region, at least the capping layer by performing an etch process, thereby exposing a top surface of an upper layer of the layer stack. The method further includes forming a p-type doped GaN layer in the recessed gate region and on the capping layer by performing a non-selective deposition process.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully