ULTRASOUND T/R ISOLTATION DISOLATOR WITH FAST RECOVERY TIME ON SOI
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United States of America Patent
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app pub date -
Dec 6, 2016
filing date -
Dec 18, 2015
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Abandoned
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Abstract
A semiconductor disolator device is provided. The device may include a silicon-on-insulator (SOI) substrate, a body layer disposed on the SOI substrate, a first p-type well disposed on the body layer, a first n-type well disposed on the first p-type well to form a first p-n junction, and a second p-type well that is spaced a predetermined distance from at least one of the first p-type well and first n-type well.
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