SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 22, 2017
app pub date -
Dec 16, 2014
filing date -
Feb 25, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a wall-like first guard ring structure that is formed to surround a periphery of an element formation region on a semiconductor substrate and that extends in a thickness direction of the substrate through an insulating film; and a wall-like second guard ring structure that is formed to surround the periphery of the element formation region between the element formation region on the semiconductor substrate and the first guard ring structure and that extends in the thickness direction of the substrate through the insulating films. The first and second guard ring structures are formed of a conductive material, and the first guard ring structure is provided in a state of being insulated from the semiconductor substrate, the element formation region and the second guard ring structure.
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