Integrated circuit with multi-threshold bulk FinFETs
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United States of America Patent
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Jun 2, 2020
Grant Date -
Jun 22, 2017
app pub date -
Mar 17, 2015
filing date -
Mar 17, 2014
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Abstract
A method for manufacturing a FinFET having a fin that has a fin body includes selecting a desired electrical performance parameter, selecting a base dimension of the fin, identifying a combination of fin-body doping and fin-geometry that causes the FinFET to have the desired electrical performance parameter, doping the fin body according to the identified fin-body doping, and fabricating the fin according to the fin-geometry.
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