Full-wafer inspection methods having selectable pixel density
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United States of America Patent
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Nov 30, 2016
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Dec 18, 2015
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Abstract
Full-wafer inspection methods for a semiconductor wafer are disclosed. One method includes making a measurement of a select measurement parameter simultaneously over measurement sites of the entire surface of the semiconductor wafer at a maximum measurement-site pixel density ρmax to obtain measurement data, wherein the total number of measurement-site pixels obtained at the maximum measurement-site pixel density ρmax is between 104 and 108. The method also includes defining a plurality of zones of the surface of the semiconductor wafer, with each of the zones having a measurement-site pixel density ρ, with at least two of the zones having a different sized measurement-site pixel and thus a different measurement-site pixel density ρ. The method also includes processing the measurement data based on the plurality of zones and the corresponding measurement-site pixel densities ρ. The processed measurement data can be used for statistical process control of the process used to form devices on the semiconductor wafer.
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