Structure and methods of operating two identical 4T random access memories storing the same data

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United States of America Patent

PATENT NO 9947390
SERIAL NO

15446807

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Abstract

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The random access memory includes: two identical memory cell arrays, a data write circuit and a data read circuit. Array structures of the two identical memory cell arrays are the same, and same original stored information is stored in memory cells with a same address in the two identical memory cell arrays. The data write circuit is configured to write same data into the memory cells with the same address in the two identical memory cell arrays. The data read circuit is configured to select two pieces of stored information from the memory cells with the same address in the two identical memory cell arrays, and to output “0” if the two pieces of stored information are different or output one of the two pieces of stored information if the two pieces of stored information are the same.

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Patent Owner(s)

Patent OwnerAddress
TSINGHUA UNIVERSITYNO 1 TSINGHUA YUAN HAIDIAN DISTRICT BEIJING 100084 100084
GRADUATE SCHOOL AT SHENZHEN TSINGHUA UNIVERSITY528000 GUANGDONG PROVINCE SHENZHEN CITY XILI TOWN BUILDING 204 J TSINGHUA CAMPUS OF SHENZHEN UNIVERSITY SHENZHEN CITY GUANGDONG PROVINCE 528000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Xinhong Beijing, CN 2 4
Pan, Liyang Beijing, CN 8 62
Wu, Dong Beijing, CN 65 843

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