DEVICE AND METHOD FOR CALCULATING TRAPPING PARAMETERS BY MEASURING SHORT-CIRCUIT CURRENT DECAY UNDER REVERSE BIAS VOLTAGE

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United States of America Patent

SERIAL NO

15450016

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Abstract

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A device for calculating trapping parameters by measuring short-circuit current decay under a reverse bias voltage, including: a vacuum chamber, an experiment table, a lower electrode, a shielding layer, an upper electrode, a direct current charging module, a switch, a short-circuit measuring system, and a computer. The experiment table, the lower electrode, the shielding layer, the test sample, and the upper electrode are disposed from the bottom up in that order inside the vacuum chamber. The upper electrode is connected to the direct current charging module via the switch. The upper electrode and the lower electrode are electrically connected via the short-circuit measuring system. The short circuit or the detrapping current measuring circuit is selectively electrically connected under the control of the selective switch. The reverse bias voltage source and the microammeter are connected in series.

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Patent Owner(s)

Patent OwnerAddress
STATE GRID CORPORATION OF CHINANO 86 WEST CHANG'AN STREET XICHENG DISTRICT BEIJING 100031
XI'AN JIAOTONG UNIVERSITYNO 28 XIANNING WEST ROAD BEILIN DISTRICT XI'AN 710048
HENAN EPRI ELECTRIC TECHNOLOGY CO LTDNO 98 SIXTH STREET ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE ZHENGZHOU 450000
STATE GRID HENAN ELECTRIC POWER COMPANY ZHENGZHOU POWER SUPPLY COMPANYNO 19 WEST HUAIHE ROAD ZHONGYUAN DISTRICT ZHENGZHOU 450000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JI, Guojian Zhengzhou, CN 1 1
LI, Yuan Xi'an, CN 465 4935
LI, Zhimin Zhengzhou, CN 22 455
LIU, Furong Zhengzhou, CN 6 107
LU, Peng Zhengzhou, CN 118 403
MU, Haibao Xi'an, CN 3 1
SHEN, Wenwei Xi'an, CN 1 1
ZHANG, Guanjun Xi'an, CN 18 64
ZHANG, Weizheng Zhengzhou, CN 3 5
ZHAO, Lin Xi'an, CN 123 822

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