METHOD OF ADDRESSING FILM LIFTOFF IN MEMS FABRICATION
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United States of America Patent
Stats
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N/A
Issued Date -
Jun 22, 2017
app pub date -
Jan 27, 2016
filing date -
Dec 17, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method of fabricating a MEMS device. A first spacer is formed above a CMOS substrate containing circuitry. Vias are formed within the first spacer. A first metal is formed above the first spacer and vias and patterned to form a MEMS element. A second spacer is formed above the MEMS element and first spacer. A via is formed within the second spacer. A second metal is formed above the second spacer and the via. A capping layer is formed above the second metal. The second metal is patterned to form a second MEMS element. The device is cleaned using a developer solution while the capping layer protects the second MEMS element. The first and second spacers are removed to release the first and second MEMS elements.
First Claim
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