BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Jun 15, 2017
app pub date -
Dec 6, 2016
filing date -
Dec 10, 2015
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Abstract
A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, an emitter disposed on the first well region and having the second conductive type, a base disposed on the first well region and having the first conductive type, a collector disposed on the second well region and having the second conductive type, and device isolation regions disposed among the emitter, the base and the collector. Particularly, the emitter, the base and the collector are spaced apart from the device isolation regions.
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