MANUFACTURE METHOD OF TFT SUBSTRATE STRUCTURE AND TFT SUBSTRATE STRUCTURE
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United States of America Patent
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app pub date -
Jun 24, 2015
filing date -
Jun 9, 2015
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Abstract
The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure according to the present invention, by adjusting the parameter of etching as manufacturing the gate, the angular surfaces are formed at the two sides of the gate, and the gate is used to be a mask to implement ion implantation to the polysilicon layer to form the n-type heavy doping area and the n-type light doping area are formed at the polysilicon layer at the same time. In the TFT structure according to the present invention, the polysilicon layer comprises n-type heavy doping areas at two sides and n-type light doping areas between the channel area of the polysilicon layer and the n-type heavy doping areas.
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