Regulating interface layer formation for two-terminal memory

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United States of America Patent

PATENT NO 10693062
APP PUB NO 20170162783A1
SERIAL NO

15370561

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Abstract

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Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth of the interface layer can be regulated with N2O plasma.

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Patent Owner(s)

Patent OwnerAddress
CROSSBAR INC3200 PATRICK HENRY DRIVE SUITE 110 SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jo, Sung Hyun Sunnyvale, US 127 3023
Narayanan, Sundar Cupertino, US 43 303
Zhao, Liang Santa Clara, US 669 2735

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