CRACK STOP LAYER IN INTER METAL LAYERS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 8, 2017
app pub date -
Dec 2, 2015
filing date -
Dec 2, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Devices and methods for forming a device are presented. The method includes providing a substrate prepared with interlevel dielectric (ILD) layers having interconnect levels. Each of the ILD layers has a metal level dielectric which includes one or more metal lines and a via level dielectric which includes one or more via contacts. A crack stop layer is formed within one of the via level dielectric of one of the ILD layers. The crack stop layer prevents crack formation in the ILD layer or crack propagation to underlying ILD layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully