Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations
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United States of America Patent
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Mar 6, 2018
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N/A
app pub date -
Feb 16, 2017
filing date -
Aug 12, 2015
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Abstract
A non-volatile memory system includes a first circuit and a second circuit both coupled to a magnetoresistance tunnel junction (MTJ) cell to substantially reduce the level of current flowing through the MTJ with rise in temperature, as experienced by the MTJ. The first circuit is operable to adjust a slope of a curve representing current as a function of temperature and the second circuit is operable to adjust a value of the current level through the MTJ to maintain current constant or to reduce current when the temperature increases. This way sufficient current is provided for the MTJ at different temperatures to prevent write failure, over programming, MTJ damage and waste of current.
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