MEMORY DEVICE

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United States of America Patent

APP PUB NO 20170162231A1
SERIAL NO

15186669

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Abstract

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A memory device may be provided. The memory device may include a plurality of channel areas including a plurality of cell array areas. The memory device may include power interconnections and capacitor areas extended between the plurality of cell array areas in the plurality of channel areas.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHUN, Duk Su Icheon-si Gyeonggi-do, KR 13 27

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