Method to Manufacture Highly Conductive Vias and PROM Memory Cells by Application of Electric Pulses
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United States of America Patent
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Jun 1, 2017
app pub date -
Nov 30, 2016
filing date -
Nov 30, 2015
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Abstract
A memory device having a first array of first electrodes extending along a first direction made from a first material and a second array of second electrodes extending along a second direction made from a second material. An intersection defined by the first array and the second array, wherein each intersection of the first array and the second array defines a two-terminal resistive memory cell, said memory cell formed by a conductive path between said first and second electrodes.
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