NONVOLATILE RESISTANCE RANDOM ACCESS MEMORY DEVICE WITH LOW AND RELIABLE OPERATING VOLTAGE AND LONG-TERM STABILITY AND FABRICATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Jun 1, 2017
app pub date -
Aug 5, 2016
filing date -
Nov 27, 2015
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Abstract
Disclosed are nonvolatile resistance random access memory device and a fabrication method thereof. The nonvolatile resistance random access memory device includes a lower electrode, an insulator film formed on a surface of the lower electrode, and an upper electrode formed over the insulator film, the lower electrode includes a base, and a thin metal layer formed on a surface of the base, and the lower electrode has a 3D structural pattern in which a plurality of protruding structures is repeatedly arranged at a constant interval. The 3D metal structures have a shape selected from among a pyramid (quadrangular pyramid), a trapezoidal pyramid (pyramid with a flat top), a pillar, and a prism. Uniform conductive filaments are formed via the space between the 3D metal structures, whereby the nonvolatile resistance random access memory device is capable of being driven at a low operating voltage and has long-term stability.
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