NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD OF FABRICATING THE SAME

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United States of America Patent

SERIAL NO

14773045

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Abstract

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Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.

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Patent Owner(s)

  • MEIJO UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKASAKI, Isamu Nagoya-shi, Aichi, JP 78 2193
IWAYA, Motoaki Nagoya-shi, Aichi, JP 33 164
SASAJIMA, Hiroki Nagoya-shi, Aichi, JP 2 0
SUZUKI, Tomoyuki Nagoya-shi, Aichi, JP 140 878
TAKEUCHI, Tetsuya Nagoya-shi, Aichi, JP 95 1201

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