SUBSTRATE PROCESSING METHOD AND APPARATUS THEREOF
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United States of America Patent
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Jun 1, 2017
app pub date -
Nov 28, 2016
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Nov 27, 2015
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The invention relates to a substrate processing method and relevant apparatus. The method includes: placing the substrate into a reactor consist by several walls; delivering etching gas to the reactor to etch the substrate; receiving optical signal from the reactor with the inspection window arranged on at least one of said walls to determine the endpoint of etching; generating protective gas flow in the inspection window during etching process, to prevent or reduce the etching gas or etching by-product flow toward the inspection window. This invention could improve the accuracy and stability of etching endpoint detection.
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