SRAM-LIKE EBI STRUCTURE DESIGN AND IMPLEMENTATION TO CAPTURE MOSFET SOURCE-DRAIN LEAKAGE EARILER
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Nov 30, 2015
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Nov 30, 2015
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Abstract
A SRAM-like electron beam inspection (EBI) structure and method for determining defects in integrated circuits inline during the production process at a level that enables earlier detection during fabrication. Initial layers, such as active layer, poly gate and contact of an IC are first fabricated, and a conductive mesh with horizontal components is provided above the contact layers connecting contact nodes of the contact layers. Voltage contrast is observed during EBI to detect short-circuits, open-circuits, or leakage currents formed between the horizontal components of the conductive mesh and metallized islands placed therebetween.
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