Nitride Light Emitting Diode Structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Feb 7, 2017
filing date -
Feb 6, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A nitride light-emitting diode (LED) structure includes a substrate, a buffer layer, an N-type layer, a stress release layer, a quantum well light-emitting layer and a P-type layer, wherein, between the N-type layer and the stress release layer, an electric field distribution layer is inserted, which is an n-doped multi-layer GaN structure with growth temperature equaling to or lower than that of the quantum well light-emitting layer; and GaN layers of different doping concentrations are applied to gradually reduce electric field concentration and make uniform spreading of current, thus enhancing electrostatic voltage endurance, reducing failure rate during usage, improving operational reliability and extending service life of the nitride semiconductor component.
First Claim
Other Claims data not available