Nitride Light Emitting Diode
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United States of America Patent
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Feb 3, 2017
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Jan 12, 2015
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A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting layer is a MQW structure composed of a barrier layer and a well layer, in which, an AlGaN electron tunneling layer is inserted into at least one well layer closing to the n-type nitride layer with barrier height greater than that of the barrier layer; in addition, the barriers of the AlGaN electron tunneling layer and the well layer are high enough so that electrons are difficult to transit towards thermionic emission direction, but mainly transit through tunneling in the InGaN well layers, which confines electron mobility and adjusts electron distribution. Hence, electrons have less chance to spill over into the P-type nitride layer.
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